TECHNICAL COMMITTEE
Basic Mechanisms
Elizabeth Auden
Los Alamos National Laboratory, USA
Stefano Bonaldo
University of Padova, Italy
Radiation Effects in Devices and ICs
Hugh Barnaby
Arizona State University, USA
Michael Steffens
Fraunhofer INT, Germany
Single Event Effects : Mechanisms and Modeling
Adrian Ildefonso
Naval Research Laboratory, USA
Philippe Paillet
CEA DAM, France
Single Event Effects in Devices and ICs
Michael King
Sandia National Laboratories, USA
Frédéric Wrobel
University of Montpellier, France
Hardness Assurance
Philippe Adell
NASA Jet Propulsion Laboratory, USA
Anastasia Pesce
ESA, Netherlands
Facilities and Dosimetry
Anatoly Rosenfeld
University of Wollongong, Australia
Benedikt Bergmann
University of Prague, Czech Republic
Radiation Hardening by Design
Fernanda Lima-Kastensmidt
Federal University of Rio Grande do Sul, Brazil
Gilles Gasiot
STMicroelectronics, France
Radiation effects in Photonic Devices
Milos Burger
University of Michigan, USA
Clémentine Durnez
CNES, France
Environments
Janet Barth
NASA, retired, USA
Pete Truscott
Kallisto Consulting, United Kingdom
Effects in Complex Devices and Systems
Bharat Bhuva
Vanderbilt University, USA
Cristina Plettner
ESA, Netherlands
Poster
Michael Trinczek
TRIUMF, Canada
Christian Poivey
ESA, Netherlands
Data Workshop
Jérémy Guillermin
TRAD, France
Lili Ding
NINT, China
